Observation of electron resonant tunneling in a lateral dual-gate resonant tunneling field-effect transistor
- 10 July 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2) , 176-178
- https://doi.org/10.1063/1.102113
Abstract
A new lateral resonant tunneling field-effect transistor (LARTFET) has been fabricated using molecular beam epitaxy and ultrahigh-resolution electron beam lithography. The LARTFET has two 80-nm-long gate electrodes separated by 100 nm. The dual gates create double potential barriers in the channel and a quantum well in between. Conductance oscillations are observed, which, for the first time, indicate electron resonant tunneling through the energy states in a lateral double-barrier quantum well formed electrostatically. Furthermore, after illumination, two additional negative transconductance peaks are observed. These additional peaks may be related to electron resonant tunneling through the donor-related deep levels in silicon-doped Al0.35Ga0.65As .Keywords
This publication has 8 references indexed in Scilit:
- Effect of local alloy disorder on emission kinetics of deep donors (D X centers) in AlxGa1−xAs of low Al contentApplied Physics Letters, 1988
- Lateral resonant tunneling field-effect transistorApplied Physics Letters, 1988
- Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexityIEEE Transactions on Electron Devices, 1987
- Resonant tunneling transistors with controllable negative differential resistancesIEEE Electron Device Letters, 1985
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985
- Deep level characterization of AlGaAs and selectively doped N-AlGaAs/GaAs heterojunctionsJournal of Vacuum Science & Technology B, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983