Ambipolar organic field-effect transistors based on rubrene single crystals
- 16 January 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (3)
- https://doi.org/10.1063/1.2166698
Abstract
We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p- and n-channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1×10−2cm2∕Vs, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.Keywords
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