Electrical property improvements in In-doped dislocation-free GaAs by bulk annealing
- 15 December 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (12) , 1307-1309
- https://doi.org/10.1063/1.96313
Abstract
The effects of bulk annealing on the electrical properties of an In-doped dislocation-free semi-insulating GaAs are investigated. The crystal is grown by a fully encapsulated Czochralski method using the vertical magnetic field. It was found that the EL2 concentration increases after isochronal bulk annealing for 5 h from 800 to 1100 °C. In addition, the activation efficiency of implanted Si was found to correlate to the annealing behavior of the defect.Keywords
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