Dose thresholds for implantation of iron-doped indium phosphide
- 1 May 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5) , 3353-3356
- https://doi.org/10.1063/1.329157
Abstract
Silicon and beryllium ions have been implanted at 300 °K into iron doped semi‐insulating InP substrates. In all cases a threshold dose was found in the high 1011 cm−2 to mid 1012 cm−2 range which depends both on the substrate and the ion being implanted. A simple model identifies the threshold fluence for n‐type implantation with the excess iron in the substrate and the threshold for p‐type implants with the background impurities in the substrate.This publication has 6 references indexed in Scilit:
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