Thermal degradation of InP and its control in LPE growth
- 1 August 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (8) , 5296-5301
- https://doi.org/10.1063/1.326627
Abstract
Thermal degradation of polished InP surfaces of (001) and (111) B orientations has been investigated. These specimens show severe deterioration when annealed under conditions typically used in the LPE growth of InP and InGaAsP layers. We have successfully controlled the decomposition of InP substrates in LPE growth by introducing minute amounts of phosphine gas (PH3) into the flowing hydrogen ambient. A temperature‐dependent threshold concentration has been determined above which no thermal degradation is observed.This publication has 21 references indexed in Scilit:
- Quaternary Alloy Infrared Heterojunction DetectorsOptical Engineering, 1978
- Experimental studies on meltback morphology of InPJournal of Crystal Growth, 1977
- Thermal degradation of homoepitaxial GaAs interfacesApplied Physics Letters, 1977
- Liquid phase epitaxial growth of gallium arsenide on an etched substrateMaterials Research Bulletin, 1976
- The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuumJournal of Physics D: Applied Physics, 1976
- The effect of temperature on the surface structure and stoichiometry of (100) InP surfacesThin Solid Films, 1975
- The evaporation of InP under Knudsen (equilibrium) and Langmuir (free) evaporation conditionsJournal of Physics D: Applied Physics, 1974
- Criteria for tipping during the liquid phase epitaxial growth of indium phosphideJournal of Crystal Growth, 1973
- EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID-PHASE EPITAXYApplied Physics Letters, 1970
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969