A Metastable Alpha-Particle Irradiation Induced Defect in n-GaAs
- 1 April 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (4A) , L491-493
- https://doi.org/10.1143/jjap.33.l491
Abstract
We report the introduction and characterization of a metastable alpha-particle irradiation induced defect, Eα8, in n-GaAs by deep level transient spectroscopy (DLTS) using Schottky barrier diodes. The Eα8 defect, with an energy level 0.18 eV below the conduction band, as determined by low-field DLTS measurements, could be reversibly transformed (removed and re-introduced) by employing zero and reverse bias anneals, respectively, in the 100–140 K temperature range. The transformation kinetics of Eα8 displayed first order behaviour and was found to be charge state dependant.Keywords
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