Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1499-1502
- https://doi.org/10.1109/mwsym.1997.596614
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Large-signal relaxation-time model for HEMTs and MESFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A simplified broad-band large-signal nonquasi-static table-based FET modelIEEE Transactions on Microwave Theory and Techniques, 2000
- New MODFET small signal circuit model required for millimeter-wave MMIC design: extraction and validation to 120 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- A Vector Corrected High Power On-Wafer Measurement System with a Frequency Range for the Higher Harmomcs up to 40 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994