A simplified broad-band large-signal nonquasi-static table-based FET model
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 48 (3) , 395-405
- https://doi.org/10.1109/22.826838
Abstract
In this paper, a simplified nonquasi-static table-based approach is developed for high-frequency broad-band large-signal field-effect-transistor modeling. As well as low-frequency dispersion, the quadratic frequency dependency of the y-parameters at high frequencies is taken into account through the use of linear delays. This model is suitable for applications related with nonlinear microwave computer-aided design and can be both easily extracted from dc and s-parameter measurements and implemented in commercially available simulation tools. Model formulation, small-signal, and large-signal validation will he described In this paper. Excellent results are obtained from dc up to the device f(T) frequencies, even when f(T) is as high as 100 GHzKeywords
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