Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A new on-wafer large-signal waveform measurement system with 40 GHz harmonic bandwidthPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Experimental Demonstration and CAD Investigation of Class B HFET Transistor Operation at Microwave FrequenciesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1998
- Direct extraction of non-linear intrinsic transistor behaviour from large signal waveform measurement dataPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Waveform-based modeling and characterization of microwave power heterojunction bipolar transistorsIEEE Transactions on Microwave Theory and Techniques, 1995
- A Vector Corrected High Power On-Wafer Measurement System with a Frequency Range for the Higher Harmomcs up to 40 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994