20 Gbit/s 2:1 multiplexer using 0.3 μm gate length double pulse doped quantum well GaAs/AlGaAs transistors
- 31 October 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 15 (1-4) , 323-326
- https://doi.org/10.1016/0167-9317(91)90237-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- 20 Gbit/s time-division multiplexer IC in silicon bipolar technologyElectronics Letters, 1990
- E-Beam Direct-Write in a Dry-Etched Recess Gate HEMT Process for GaAs/AlGaAs CircuitsJapanese Journal of Applied Physics, 1990