High temperature (>400 K) ferromagnetism in III–V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy
- 1 April 2002
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 122 (1-2) , 37-39
- https://doi.org/10.1016/s0038-1098(02)00073-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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