Ultrafast diffusion of a defect in indium-doped silicon introduced by chemomechanical polishing
- 10 October 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (15) , 1426-1428
- https://doi.org/10.1063/1.99962
Abstract
The deactivation of the acceptor indium after chemomechanical polishing of p‐type silicon is shown to result from the formation of a complex involving the indium atom and a positively charged, extremely fast‐diffusing defect X. In the temperature range from 220 to 280 K, the dissociation frequency ν of this complex and the diffusion coefficient D of the defect X are thermally activated and satisfy the expressions ν=ν0 exp(−Ed/kT) and D=D0 exp(−Ea/kT) with ν0=2.6×1012 s−1, Ed=0.690 eV, D0=5×104 cm2/s, and Ea=0.665 eV.Keywords
This publication has 5 references indexed in Scilit:
- Neutralization of Acceptors and Formation of Agglomerates in Silicon Wafers Due to Intrinsic Point Defects Created by Chemomechanical Polishing and by QuenchingPhysica Status Solidi (a), 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Entstehung von Eigen‐Zwischengitteratomen beim chemisch‐mechanischen Polieren von SiliziumCrystal Research and Technology, 1978
- Trapping effect in diffusion of interstitial impuritl atoms in B.C.C. latticesActa Metallurgica, 1974
- Theoretical Treatment of the Kinetics of Diffusion-Limited ReactionsPhysical Review B, 1957