Analysis of C-V data in the accumulation regime of MIS structures
- 31 December 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (12) , 993-996
- https://doi.org/10.1016/0038-1101(76)90178-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electron mobility in epitaxial silicon near a sapphire substrateJournal of Applied Physics, 1976
- Static technique for precise measurements of surface potential and interface state density in MOS structuresApplied Physics Letters, 1975
- Graphical method for determining the flat band voltage for silicon on sapphireSolid-State Electronics, 1975