Static technique for precise measurements of surface potential and interface state density in MOS structures
- 1 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (7) , 400-402
- https://doi.org/10.1063/1.88193
Abstract
A new static technique for a very accurate measurement of charge, surface potential, low−frequency capacitance, interface charge, and interface state density in MOS structures is presented. A comparison with the conductance method is made. For a 〈111〉−oriented n−type silicon wafer, oxidized in dry oxygen and annealed in hydrogen, the distribution of the interface state density is shown over an energy range of 0.9 eV within the energy gap.Keywords
This publication has 14 references indexed in Scilit:
- Measurement of low densities of surface states at the SiSiO2-interfaceSolid-State Electronics, 1973
- Admittance of an MOS device with interface charge inhomogeneitiesJournal of Applied Physics, 1972
- Interface states in SiSiO2 interfacesSolid-State Electronics, 1972
- Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate SiSolid-State Electronics, 1972
- The measurement of interface state charge in the MOS systemSolid-State Electronics, 1971
- METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURESApplied Physics Letters, 1971
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Si-SiO[sub 2] Fast Interface State MeasurementsJournal of the Electrochemical Society, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967