A Novel Copper Reflow Process Using Dual Wetting Layers

Publisher Website

1 January 1997

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 57-58
https://doi.org/10.1109/vlsit.1997.623693

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Performance of MOCVD tantalum nitride diffusion barrier for copper metallization
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
High-Reliability Copper Interconnects through Dry Etching Process
Japanese Journal of Applied Physics, 1995