The change of the electronic properties of CIGS devices induced by the ‘damp heat’ treatment
- 1 February 2002
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 403-404, 320-324
- https://doi.org/10.1016/s0040-6090(01)01510-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electrical characterization of ZnO/CdS/Cu(In,Ga)Se2 devices with controlled sodium contentThin Solid Films, 2001
- Classification of metastabilities in the electrical characteristics of ZnO/CdS/Cu(In,Ga)Se2 solar cellsThin Solid Films, 2001
- Transient capacitance spectroscopy of defect levels in CIGS devicesThin Solid Films, 2000
- Influence of damp heat on the electrical properties of Cu(In,Ga)Se 2 solar cellsThin Solid Films, 2000
- Thermally assisted tunnelling in Cu(In,Ga)Se 2 -based photovoltaic devicesThin Solid Films, 2000
- Electronic properties of Cu(In,Ga)Se 2 heterojunction solar cells-recent achievements, current understanding, and future challengesApplied Physics A, 1999
- Effects of Na on the electrical and structural properties of CuInSe2Journal of Applied Physics, 1999
- Defect physics of thechalcopyrite semiconductorPhysical Review B, 1998
- Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctionsJournal of Applied Physics, 1996
- A novel technique for studying electric field effect of carrier emission from a deep level centerApplied Physics Letters, 1983