A novel technique for studying electric field effect of carrier emission from a deep level center

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Abstract
A new reverse-bias pulsed deep level transient spectroscopy technique (RDLTS) is reported for studying the electric field effect of carrier emission from a deep level defect. The technique uses a reverse-bias pulse whose duration controls the emission of the carriers from a narrow region. The electric field in the region is determined by the pulse height used. The subsequent transient signal due to the capture of carriers by the defect states in the narrow region, in contrast with the emission signal in conventional DLTS, was obtained. The technique is extremely simple to use and requires no additional equipment when using a conventional DLTS setup. Formulation of this approach and the experimental results using this technique were given to illustrate the validity and simplicity of the technique.