Ultra-shallow junction formation using very low energy B and BF/sub 2/ sources
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 607-610
- https://doi.org/10.1109/iit.1996.586472
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ultra-low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature AnnealingMRS Proceedings, 1996
- Characteristics of a plasma doping system for semiconductor device fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double AcceptorJapanese Journal of Applied Physics, 1994