Etching of silicon by SF6 induced by ion bombardment
- 1 March 1986
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 13 (1-3) , 556-560
- https://doi.org/10.1016/0168-583x(86)90565-3
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Argon-ion assisted etching of silicon by molecular chlorineJournal of Applied Physics, 1984
- Ion-assisted etching of silicon by molecular chlorineJournal of Vacuum Science & Technology A, 1984
- Surface processes in plasma-assisted etching environmentsJournal of Vacuum Science & Technology B, 1983
- Surface studies of and a mass balance model for Ar+ ion-assisted Cl2 etching of SiJournal of Vacuum Science & Technology B, 1983
- Basic chemistry and mechanisms of plasma etchingJournal of Vacuum Science & Technology B, 1983
- Mass and energy distribution of particles sputter etched from Si in a XeF2 environmentApplied Physics Letters, 1982
- Plasma chemical physics in the electronics industryThin Solid Films, 1981
- A novel anisotropic dry etching techniqueJournal of Vacuum Science and Technology, 1981
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etchingJournal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979