Design and construction of apparatus for characterization of gated field emitter array electron emission
- 1 June 1996
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 67 (6) , 2387-2393
- https://doi.org/10.1063/1.1147007
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Scanning tunneling microscopy and spectroscopy on thin Fe3O4 (110) films on MgOJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Vacuum microelectronic devicesProceedings of the IEEE, 1994
- Arrays of gated field-emitter cones having 0.32 μm tip-to-tip spacingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Use of boundary element methods in field emission computationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Measured DC performance of large arrays of silicon field emittersIEEE Transactions on Electron Devices, 1994
- Simulation of field emission microtriodesIEEE Transactions on Electron Devices, 1993
- The charge-density method of solving electrostatic problems with and without the inclusion of space-chargeJournal of Physics E: Scientific Instruments, 1982