Measured DC performance of large arrays of silicon field emitters
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (10) , 1866-1870
- https://doi.org/10.1109/16.324600
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Collector-assisted operation of micromachined field-emitter triodesIEEE Transactions on Electron Devices, 1993
- Self-aligned silicon field emission cathode arrays formed by selective, lateral thermal oxidation of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Triode characteristics and vacuum considerations of evaporated silicon microdevicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Fabrication of encapsulated silicon-vacuum field-emission transistors and diodesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Vacuum microelectronics-1992Journal of Micromechanics and Microengineering, 1992
- Oxidation-sharpened gated field emitter array processIEEE Transactions on Electron Devices, 1991
- Demonstration of low voltage field emissionIEEE Transactions on Electron Devices, 1991
- Design of high-vacuum test station for rapid evaluation of vacuum microelectronic devicesIEEE Transactions on Electron Devices, 1991
- The Slope of Logarithmic Plots of the Fowler-Nordheim EquationPhysical Review B, 1952
- Electron emission in intense electric fieldsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928