Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers

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Abstract
We report the fabrication and performance characteristics of InGaAsP double channel planar buried heterostructure (DCPBH) lasers with multiquantum well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40–50 mA at 30 °C, external differential quantum efficiencies of ∼50% at 30 °C, and T0 values ∼160–180 K in the temperature range 10–60 °C. Under optical pumping the measured T0 are in the range 100–150 K. The lasers operate in a single transverse mode up to high powers (>10 mW/facet), can be modulated at ∼2 Gb/s, and exhibit less frequency chirping than similar lasers with conventional active layers. The observed high T0 and smaller chirp make DCPBH multiquantum well lasers potentially attractive for system applications.