One-dimensional electronic systems in ultrafine mesa-etched single and multiple quantum well wires
- 28 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (22) , 2176-2178
- https://doi.org/10.1063/1.100274
Abstract
Ultrafine mesa-etched structures with lateral geometrical dimensions of 250 to 550 nm have been prepared in modulation-doped AlGaAs/GaAs heterostructures and multiple quantum well systems. From magnetotransport measurements at low temperatures (T=2.2 K) on these single and multiple quantum well wire structures we find that the lateral carrier confinement leads to the formation of one-dimensional electronic subbands of typically 2 meV energy separation. The width of the electron channel is smaller than the geometrical width, indicating a lateral depletion length of about 100 to 150 nm at the mesa edge.Keywords
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