A CMOS matrix for extracting MOSFET parameters before and after irradiation
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1529-1535
- https://doi.org/10.1109/23.25492
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Post-Irradiation Effects in Field-Oxide Isolation StructuresIEEE Transactions on Nuclear Science, 1987
- An Analytical Method for Predicting CMOS SRAM Upsets with Application to Asymmetrical Memory CellsIEEE Transactions on Nuclear Science, 1986
- Parameter Extraction from Spaceborne MOSFETsIEEE Transactions on Nuclear Science, 1985
- Electron Trapping in Rad-Hard RCA IC's Irradiated with Electrons and Gamma RaysIEEE Transactions on Nuclear Science, 1984
- Modeling total dose effects in narrow-channel devicesIEEE Transactions on Electron Devices, 1983
- The Effects of Test Conditions on MOS Radiation-Hardness ResultsIEEE Transactions on Nuclear Science, 1981