Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode

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Abstract
An InGaAsP/InP DH LED, whose active region has some mechanical damage, was operated at room temperature and was investigated by EL topography and TEM. An EL pattern of the diode included two “dark-band” defects which lay in the direction. After 100 hours of operation, the EL pattern did not change. TEM observation showed that no glide dislocations were generated from the mechanical damage. This result suggests that dislocation glide motion during carrier injection or optical excitation occurs only with difficulty in InGaAsP/InP DH LED's at room temperature.