Millimeter-Wave Solid-State Exciter-Modulator-Amplifier Module for Gigabit Data-Rate
- 1 January 1972
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A module consisting of an IMPATT diode oscillator, a PIN diode bi-phase modulator, and an IMPATT diode power amplifier operated at a gigabit data-rate in V-band frequency range is described.Keywords
This publication has 3 references indexed in Scilit:
- Millimeter-wave silicon IMPATT power amplifiers for phase-modulated signalsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- Amplification of high-speed PCM phase-shift-keyed millimeter-wave signals through an injection-locked IMPATT oscillatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1971
- High-power millimeter wave IMPATT oscillators with both hole and electron drift spaces made by ion implantationProceedings of the IEEE, 1970