High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors
- 28 January 2005
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 97 (4)
- https://doi.org/10.1063/1.1849424
Abstract
We expand upon previous work [S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C. J. Scozzie, and A. Lelis, J. Appl. Phys. 92, 4053 (2002)] by applying the device model to 6H silicon carbide metal-oxide-semiconductor field-effect transistors operating at high temperatures. We compare the model predictions with the device measurements from room temperature to 200 °C and find agreement.This publication has 5 references indexed in Scilit:
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