Monte Carlo study of electron transport in SiC

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Abstract
Temperature- and electric field-dependent electron transport in 3C–, 4H–, and 6H–SiC has been calculated by the Monte Carlo technique. Due to the freezeout of deep donor levels the role of ionized impurity scattering in 6H–SiC is suppressed and the role of phonon scattering is enhanced, compared to 3C– and 4H–SiC. There are indications of impurity band formation for impurity concentrations exceeding 1019 cm−3. It is found that ionized impurity scattering along with the deep donor ionization is responsible for the temperature dependence of mobility anisotropy ratio. Electron effective masses and electron-phonon coupling constants have been deduced from the comparison of Monte Carlo simulation results with available experimental data on low-field electron mobility. The extracted model parameters are used for high-field electron transport simulations. The calculated velocity-field dependencies agree with experimental results. The saturation velocities in all three polytypes are close, but the transient velocity overshoot at high electric field steps is much more pronounced in 3C–SiC.