An ensemble Monte Carlo study of high-field transport in β-SiC
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4) , 466-470
- https://doi.org/10.1016/0921-4526(93)90279-f
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Soft-threshold lucky drift theory of impact ionisation in semiconductorsSemiconductor Science and Technology, 1987
- Temperature dependence of electrical properties of n- and p-type 3C-SiCJournal of Applied Physics, 1987
- Electron cyclotron resonance in cubic SiCSolid State Communications, 1985
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Saturated electron drift velocity in 6H silicon carbideJournal of Applied Physics, 1977
- The location and shape of the conduction band minima in cubic silicon carbideJournal of Luminescence, 1977
- First-order optical and intervalley scattering in semiconductorsPhysical Review B, 1976
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- Threshold Energies for Electron-Hole Pair Production by Impact Ionization in SemiconductorsPhysical Review B, 1972
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970