Properties of plasma-deposited hydrogenated amorphous silicon prepared under visible light illumination

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Abstract
Properties of hydrogenated amorphous silicon (a-Si:H) prepared by glow discharge decomposition of silane with visible light illumination on a growing surface have been described. The visible light illumination during growth has resulted in smaller light-induced changes, slightly lower photoconductivity before the prolonged illumination, lower content of bonded hydrogen, and lower ratio of the number of silicon dihydrides to that of total silicon-hydrogen bonds. Formation of Si network and consequent structural disorder of SiSi bonds, on the other hand, has not been affected by the illumination during the growth. The improved stability against the long exposure to light can be ascribed to the lower bonded hydrogen content and the reduced density of SiH2 bonds, while the structural disorder of the Si network does not have a direct relationship with the light-induced changes.