632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1669
- https://doi.org/10.1143/jjap.29.l1669
Abstract
No abstract availableKeywords
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