Electrical Properties of Gold-Doped Diffused Silicon Computer Diodes
- 1 January 1960
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 39 (1) , 87-104
- https://doi.org/10.1002/j.1538-7305.1960.tb03923.x
Abstract
Planar diffused silicon junctions with storage times of one millimicrosecond or less are readily obtained by gold doping. The introduction of uniform gold concentrations (in the range from 1.2 1015 cm−3 to 8 �...Keywords
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