Comment on ’’Normal modes of semiconductor p-n junction devices for material-parameter determination’’
- 1 October 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6444-6446
- https://doi.org/10.1063/1.328554
Abstract
During the open circuit voltage decay (OCVD) in a diode with τB/τE≫1 (τB and τE are the lifetimes of the minority carriers in the base and emitter, respectively), the quasistatic approximation is found to be valid in the emitter but not in the base. If the band‐gap narrowing ΔEg is significant, τE,τB, as well as ΔEg determine the OCVD for t<τB. For t≫τB [and exp (qV/kT)≫1] OCVD vs t plot is approximately linear with its slope ∼1/τB, irrespective of the magnitude of ΔEg.This publication has 8 references indexed in Scilit:
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