Ga 0.47 In 0.53 As field-effect transistors with a lattice-mismatched reduced leakage current GaAs gate
- 27 February 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (5) , 236-238
- https://doi.org/10.1049/el:19860162
Abstract
A lattice-mismatched GaAs gate Ga0.47In0.47As field-effect transistor (LMG-FET) with significantly reduced reverse gate leakage current is reported. The mechanism responsible for this reduction by over two orders of magnitude over previous work has been identified; it is attributed to the confinement of misfit dislocations originating at the GaAs/InGaAs interface. The LMG-FET had a gate leakage current of 0.48 μA at − V, and an extrinsic DC transconductance of 104 mS/ mm for a 1.4 μm gate length and 240 μm gate width. Further refinements in crystal growth should lead to even lower values of leakage current, making this technology attractive for high-speed logic, as well as lightwave optoelectronic integration.Keywords
This publication has 1 reference indexed in Scilit:
- Saturation velocity determination for In0.53Ga0.47As field-effect transistorsApplied Physics Letters, 1981