High energy ion implantation effects in silicon
- 1 February 1983
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (2) , 1146-1147
- https://doi.org/10.1063/1.332086
Abstract
A model is proposed for a new damage creation mechanism in a silicon crystal during ion implantation when the incoming ion has a very high energy. This damage is created through scattering by electrons as opposed to the screened coulomb scattering by the incoming ion which accounts for conventional damage creation. The model is based on relativistic kinematics and the threshold energies for the damage created in this manner are compared with other high energy effects for a standard set of dopant atoms. This damage mechanism is shown to not constitute a problem for envisioned device applications of high energy ion implantation.This publication has 5 references indexed in Scilit:
- Megavolt arsenic implantation into siliconThin Solid Films, 1982
- Ion-implanted FET for power applicationsIEEE Transactions on Electron Devices, 1974
- Three-Parameter Formula for the Electronic Stopping Cross Section at Nonrelativistic VelocitiesPhysical Review A, 1972
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- Experimental Evaluation of High Energy Ion Implantation Gradients for Possible Fabrication of a Transistor Pedestal CollectorIBM Journal of Research and Development, 1971