Acceptor profiles in silicon implanted with boron at 77°K
- 1 November 1971
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 37 (3) , 257-258
- https://doi.org/10.1016/0375-9601(71)90489-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Spatial distribution of energy deposited into atomic processes in ion-implanted siliconRadiation Effects, 1970
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961