Improved profiles of electrical activity in boron implanted silicon
- 18 November 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 28 (3) , 178-179
- https://doi.org/10.1016/0375-9601(68)90186-2
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Energy Dissipation by Ions in the kev RegionPhysical Review B, 1961