Recrystallization Phenomenon in Semiconducting Barium Titanate
- 1 January 1988
- journal article
- research article
- Published by Taylor & Francis in Transactions of the Indian Ceramic Society
- Vol. 47 (6) , 176-179
- https://doi.org/10.1080/0371750x.1988.10822921
Abstract
Semiconducting barium titanate is well known for its PTCR property. Like other process parameters, viz. mixing, calcination and sintering time, cooling rate etc, the effect of sintering temperature strongly influences the PTCR property. A systematic study on the effect of sintering temperature reveals that a rapid recrystallization occurs when the specimen is sintered above 1250°C. Microstructural features of the specimen have been correlated with their electrical properties.Keywords
This publication has 8 references indexed in Scilit:
- Effect of sintering time on the resistivity of semiconducting BaTiO3 ceramicsMaterials Letters, 1987
- Control of Liquid‐Phase‐Enhanced Discontinuous Grain Growth in Barium TitanateJournal of the American Ceramic Society, 1987
- Complex-plane impedance analysis for semiconducting barium titanateMaterials Research Bulletin, 1986
- Sintering Process of Semiconductive BaTiO3 CeramicJournal of the American Ceramic Society, 1976
- Exaggerated Grain Growth in Liquid‐Phase Sintering of BaTiO3Journal of the American Ceramic Society, 1971
- Preparation of Small‐Grained and Large‐Grained Ceramics from Nb‐Doped BaTiO3Journal of the American Ceramic Society, 1971
- Incorporation of Antimony into the Barium Titanate LatticePhysica Status Solidi (b), 1969
- Processing Techniques and Applications of Positive Temperature Coefficient ThermistorsIEEE Transactions on Component Parts, 1963