A DLTS study of electron irradiated InP
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (1) , 200-205
- https://doi.org/10.1016/0022-0248(83)90270-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Radiation defects in electron-irradiated InP crystalsPhysica Status Solidi (a), 1982
- Defect states in electron bombarded n-InPApplied Physics Letters, 1982
- Thermodynamical analysis of optimal recombination centers in thyristorsSolid-State Electronics, 1978
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974