Stability and band offsets of AlN/GaN heterostructures: impact on device performance
- 1 August 1998
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 13 (8A) , A90-A92
- https://doi.org/10.1088/0268-1242/13/8a/027
Abstract
We have performed first-principles local density calculations of several interfaces between GaN and AlN and studied their formation enthalpy and band offsets and the charge pileup at polar interfaces. Monte Carlo studies of the electrical characteristics of submicron HFET structures reveal that the pyro- and piezoelectric moments of the nitrides are a key property for designing and optimizing future devices.Keywords
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