InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
- 8 January 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (1) , 33-34
- https://doi.org/10.1049/el:20040015
Abstract
The first InGaN multiple quantum well laser diodes produced by molecular beam epitaxy are reported. Ridge waveguide lasers have been demonstrated at room temperature under pulsed current injection conditions. The lasers emit at a wavelength of approximately 400 nm with a spectral line-width of less than 0.2 nm, and a threshold current density of ∼30 kA cm−2.Keywords
This publication has 7 references indexed in Scilit:
- Strain in cracked AlGaN layersJournal of Applied Physics, 2002
- GaN-Based High Power Blue-Violet Laser DiodesJapanese Journal of Applied Physics, 2001
- High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN SubstratesJapanese Journal of Applied Physics, 2000
- GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxyApplied Physics Letters, 1999
- Facet roughness analysis for InGaN/GaN lasers with cleaved facetsApplied Physics Letters, 1998
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994