GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

This publication has 13 references indexed in Scilit:

• Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells
  Physical Review B, 1998
• Reduction of oscillator strength due to piezoelectric fields in ${\mathrm{G}\mathrm{a}\mathrm{N}/\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ quantum wells
  Physical Review B, 1998
• Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia
  Journal of Applied Physics, 1998
• Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
  Applied Physics Letters, 1998
• GaN based LEDs grown by molecular beam epitaxy
  Electronics Letters, 1997
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
  Japanese Journal of Applied Physics, 1997
• Optical Properties of Strained AlGaN and GaInN on GaN
  Japanese Journal of Applied Physics, 1997
• Blue and green electroluminescence from MBE grownGaN/InGaN heterostructures
  Electronics Letters, 1996
• Blue-violet light emitting gallium nitride p-n junctions grown by electron cyclotron resonance-assisted molecular beam epitaxy
  Applied Physics Letters, 1995
• Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy
  Journal of Crystal Growth, 1987