Optical Properties of Strained AlGaN and GaInN on GaN
- 1 February 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (2B) , L177
- https://doi.org/10.1143/jjap.36.l177
Abstract
The composition of alloys in strained ternary alloy layers, Al x Ga1- x N (0<x1- x In x N (0<x<0.20), on thick GaN was precisely determined using the high-resolution X-ray diffraction profile. The band gap of strained AlGaN is found to increase almost linearly according to the AlN molar fraction, while that of strained GaInN has a large bowing parameter of 3.2 eV.Keywords
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