Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy
- 19 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (3) , 350-352
- https://doi.org/10.1063/1.120733
Abstract
We show that optical reflectivity measurements can be used to evaluate the part of a NH 3 flux which reacts with a Ga-terminated GaNsurface or with a Ga-flux simultaneously impinging on the surface, as in standard molecular beam epitaxy situation. At least for temperatures not exceeding 700 °C, the ratio of the reacted part of the NH 3 flux to the incident flux can be assimilated to the NH 3 cracking efficiency. Being nearly zero below a threshold temperature of 450 °C, it increases with temperature but remains low (∼4%) explaining why an exceptionally high V/III flux ratio is necessary to grow GaN using NH 3 .Keywords
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