In situ monitoring of reflection high-energy electron diffraction oscillation during the growth of gallium nitride films by gas-source molecular beam epitaxy
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 916-920
- https://doi.org/10.1016/0022-0248(95)80073-l
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical properties near the band gap on hexagonal and cubic GaNApplied Physics Letters, 1994
- Intensity dependence of photoluminescence in GaN thin filmsApplied Physics Letters, 1994
- p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of MgApplied Physics Letters, 1994
- p-type zinc-blende GaN on GaAs substratesApplied Physics Letters, 1993
- Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxyApplied Physics Letters, 1993
- Growth of GaN and AlGaN for UV/blue p-n junction diodesJournal of Crystal Growth, 1993
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1993
- Growth of GaN(0001)1×1 on Al2O3(0001) by gas-source molecular beam epitaxyApplied Physics Letters, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989