GaN based LEDs grown by molecular beam epitaxy
- 4 December 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (25) , 2156-2157
- https://doi.org/10.1049/el:19971447
Abstract
GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4×1018 and 3×1017 cm–3, respectively. LEDs turn on at 3 V, and the forward voltage is 3.7 V at 20 mA. The electroluminescence peaks at 390 nm.Keywords
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