Characterization of ion-beam-sputtered tungsten films on silicon
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 36 (1-4) , 231-239
- https://doi.org/10.1016/0169-4332(89)90918-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A comparison of tungsten film deposition techniques for very large scale integration technologyThin Solid Films, 1987
- Effect of energetic neutralized noble gas ions on the structure of ion beam sputtered thin metal filmsJournal of Vacuum Science & Technology A, 1987
- Effects of deposition methods on the temperature-dependent resistivity of tungsten filmsJournal of Vacuum Science & Technology A, 1986
- Impurity effects in magnetron sputter deposited tungsten filmsJournal of Vacuum Science & Technology B, 1986
- Tungsten films produced by selective deposition onto silicon wafersThin Solid Films, 1986
- Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter depositionJournal of Vacuum Science & Technology B, 1986
- Comparison of the structure and electrical properties of thin tungsten films deposited by radio frequency sputtering and ion beam sputteringJournal of Applied Physics, 1985
- Characterization of electron-beam deposited tungsten films on sapphire and siliconJournal of Vacuum Science & Technology A, 1985
- Resistivity, grain size, and impurity effects in chemically vapor-deposited tungsten filmsJournal of Applied Physics, 1985
- FACE-CENTERED-CUBIC TUNGSTEN FILMS OBTAINED BYApplied Physics Letters, 1966