Correlation between electron spin resonance, electrical conductivity and optical absorption edge of co-evaporated thin films of the dielectric system SiO/V2O5
- 1 November 1984
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 19 (11) , 3687-3691
- https://doi.org/10.1007/bf02396941
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electron paramagnetic resonance studies of composite dielctric films of SiO and B2O3Thin Solid Films, 1979
- Properties of amorphous silicon films: Dependence on deposition rateSolid State Communications, 1973
- Absorption and Transport Study of the Pseudogap in Amorphous GePhysical Review Letters, 1973
- Impurity effects on the structure of amorphous silicon and germanium prepared in various waysPhilosophical Magazine, 1973
- Electrical properties of silicon oxide/boric oxide co-evaporated filmsThin Solid Films, 1972
- Electrical and optical properties of annealed amorphous GeThin Solid Films, 1972
- A low-loss thin film capacitorThin Solid Films, 1971
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961