Microwave performance of aGa 0.20 In 0.80 P/Ga 0.47 In 0.53 As/InP HFET grownwith MOVPE
- 27 April 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (9) , 734-735
- https://doi.org/10.1049/el:19950517
Abstract
The authors have DC, RF, and noise characterised 0.15 µm gate-length HFETs fabricated on a pseudomorphic Ga0.20In0.80P/Ga0.47In0.53As/InP material grown with MOVPE. The extrinsic transconductance is 640 mS/mm. The maximum frequency of oscillation is 260 GHz and the intrinsic transit frequency is 165 GHz. The DC and RF performances of this HFET are comparable with InAlAs/InGaAs/InP HFETs. The drain breakdown voltage of this HFET is 50% higher than InAlAs/InGaAs/InP HFETs fabricated in the authors' laboratory.Keywords
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