Submillimeter cyclotron resonance of electrons in accumulation layers on indium antimonide surfaces
- 1 July 1977
- journal article
- Published by Optica Publishing Group in Journal of the Optical Society of America
- Vol. 67 (7) , 928-931
- https://doi.org/10.1364/josa.67.000928
Abstract
We report the submillimeter-laser-magnetotransmission of pure n-type InSb in a metal-insulatorsemiconductor arrangement as a function of the applied gate voltage. From the recorded data we derive a strong dependence of the surface cylotron mass in accumulation layers on InSb on the electric field and hence on the surface density of electrons.Keywords
This publication has 6 references indexed in Scilit:
- Surface cyclotron resonance of accumulation and inversion layers in telluriumSurface Science, 1976
- Substrate effects on the cyclotron resonance in surface layers of siliconSolid State Communications, 1975
- Cyclotron resonance of electrons and holes in electric surface subbands of telluriumSolid State Communications, 1975
- Surface cyclotron resonance in InSbSolid State Communications, 1975
- On the problem of magnetic freeze-out in indium antimonideJournal of Physics and Chemistry of Solids, 1973
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957